GaN-on-Sapphire MOSFET

Industry-First 1200 V GaN-on-Sapphire MOSFET Revolutionizes Power Semiconductor MarketTransphorm has released the industry’s first 1200 V GaN-on-Sapphire MOSFET. The GaN-on-Sapphire construction enables much higher operating voltages due to the superior insulating properties of sapphire. The 1200 V GaN switches, made with high electron mobility transistors (HEMTs) on sapphire substrates, offer fast-switching and low-loss capabilities at […]

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