Advanced Nanostructures Leads To Ultra-Low Power Electronics

Researchers at Tokyo Metropolitan University have developed nanostructures with junctions of transition metal dichalcogenides for creating integrated circuits with ultra-low power consumption tunnel field-effect transistors. Field-effect transistors (FETs) are a crucial building block of nearly every digital circuit. FETs regulate current by voltage and are a fundamental part of digital circuits. Metal oxide semiconductor FETs […]

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