1700V M1 planar Silicon Carbide MOSFET

onsemi’s NTH4L028N170M1 is a SiC MOSFET developed for high voltage renewable energy applications. NTH4L028N170M1 is a 1700V M1 planar EliteSiC MOSFET from onsemi. It is a high-efficiency silicon carbide (SiC) MOSFET rated for 1700V. The NTH4L028N170M1 offers reliable, high-efficiency performance for energy infrastructure and industrial drive applications. It is optimized for fast-switching applications. The planar […]

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