Next Gen Transistors With a 2D Monolayer Interface

Researchers have developed a low contact-resistance metal-semiconductor interface with 2D monolayers for transistors. This can supposedly can improve device performance significantly. These new 2D semiconducting monolayers (MgX X=S, Se, Te) with excellent charge carrier mobility have been proposed by scientists from the Indian Institute of Nanoscience and Technology (INST), an autonomous institute of the Department […]

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