Dual Gate Drivers Optimize and Simplify SiC, IGBT Switching Circuits

The STGAP2HD for IGBTs and STGAP2SICD for SiC MOSFETs leverage ST’s latest galvanic-isolation technology to provide 6kV transient-voltage capability in a SO-36W wide-body package. In addition, ±100V/ns dv/dt transient immunity prevents spurious turn-on in electrically noisy operating conditions. The devices can deliver a powerful gate-control signal of up to 4A, with dual output pins for extra flexibility in gate […]

The post Dual Gate Drivers Optimize and Simplify SiC, IGBT Switching Circuits appeared first on Electronics For You.



from Electronics For You https://ift.tt/hlQADYb
Electronics, Electrical

Comments

Popular posts from this blog

New Safety and Comfort Products Developed For SMEs In India

Arduino Based Fancy Lights Controller

LEDs’ Light Intensity Controller Based On PWM Technique