OptiMOS Power MOSFET Enables Innovative Source-Down Technology

High power density, optimised performance, and ease of use are key requirements when designing modern power systems. To offer practical solutions for design challenges in end applications, Infineon Technologies AG, launches the new generation of OptiMOS™ Source-Down (SD) power MOSFETs. They come in a PQFN 3.3 x 3.3 mm2 package and a wide voltage class […]

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