HfO2-Based FeRAM Arrays Developed For IoT Applications

These ferroelectric memories are fully compatible with CMOS processes, scalable to advanced nodes and lead-free World’s first 16-kbit ferroelectric random-access memory (FeRAM) arrays at the 130nm node have now been developed, bringing the energy-saving technology closer to commercialisation. The advanced technology aims to strengthen embedded applications such as Internet of Things (IoT) devices and wearables. […]

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