New GaN Device Optimised For Asymmetrical Topologies

Combines GaN High-Electron-Mobility Transistors (HEMTs) and high-voltage gate drivers in system-in-package (SiP) Containing two asymmetric gallium-nitride (GaN) transistors, the MasterGaN2 delivers an integrated GaN solution suited to soft-switching and active-rectification converter topologies. The 650V normally-off GaN transistors have on-resistance (RDS(on)) of 150mΩ and 225mΩ. Each is combined with an optimised gate driver, easing the usability […]

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